Atoms of SiC material, one silicon atom will connect four carbon atoms, is the bonding energy between this silicon atom and four carbon atoms the same?
This depends on the polymorph of Silicon Carbide. If you have the less common 3C-SiC (zinc-blende structure), yes, all bonds should be equal, as each bond length has the exact same length and points in 4 corners of a tetrahedron. However, in the much more common 6H type, for example, the Silicon atom is still coordinated by 4 Carbon atoms, but you have one length that is distinctively longer. So this should also have a different bond-energy. Similar arguments, you can make for the plethora of all polymorph of SiC.
https://en.wikipedia.org/wiki/Polymorphs_of_silicon_carbide
Edit: Corrected an error (see comments below)
The bond energy between Si and the surrounding C atoms is the same unless, due to defects, there is O or H bond to the C atoms. The presence of H and O atoms is usually associated with the fabrication/synthesis method of the SiC.
Just a general note, since Michael Rüsing mentioned one of the following points: The wurtzite structure has hexagonal symmetry, it has the label 2H. Instead, the label 3C refers to the zincblende structure, which is cubic.
@Jan-martin Wagner: thanks for the pointing out the error. that is what I meant!
You may find this recent review of SiC thin films helpful. Silicon Carbide Thin Film Technologies- Recent Advances in Processing, Properties, and Applications - Part I doi.org: 10.1149/2162-877
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