Dear colleagues,

It is know that, the tunneling devices are still potentially viable structures for high-speed electronics and the challenge to creating high-performance, reliable devices is really a materials problem at its core - successful devices will come from looking at new materials, new deposition/growth techniques, and new device structures that allow much better control over interfaces between conductors and insulators. Further, the successful resonant-tunneling devices require ordered/crystalline insulators.   

Thin-film materials used in rectenna (metals Au, Al, Cr and Ti, and oxides Al2O3, Cr2O3 and TiO2) were deposited by e-beam evaporation system in our work. Since the standard metals and oxides may not result in good MIM or MIIM devices, either - many researcher have tried over many decades, and the results have just not been good.

İs it reasonable and why to apply the graphene oxide in our work instead of standard oxides (Al2O3, Cr2O3 and TiO2) since it functions as insulator?

Best regards and thanks in advance,

Konstantin. 

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