Has anybody tried reactive ion etching on teflon coating? I have coated AF teflon solution on thermally grown Si and annealed at 250 deg C for 5 min to stick the teflon on the substrate. Subsequently I have spin coated PR (AZ4562- DRIE resist) on top of teflon coating and did the litho. After that I tried RIE at different ICP (inductive coupled plasma) voltage and RF voltage but teflon has not etched to open the SiO2 layer. Another problem while developing RIE was when I put acetone and water, the whole teflon layer is washed away. There is also a serious adhesion problem of teflon on thermally grown Si. Is there any solution to that?
Thanks for the reply Dr. Ali. My PR thickness is 6.5 micron. I have done spin coat of AZ4562 at 4000rpm for 40s. But while doing O2 plasma it is not working out. I have done series of recipe for O2 plasma. One recipe is O2(sscm)-10,RF power (80W), ICP (200W) time-3min. I thought it would work but it also did not happen either. I will try one more with new set of recipe. But if u can suggest better recipe it will be very helpful. Thanks again.
you gonna need to mix your oxygen with a neutral specie (ie Ar or N2) in order to bring ion bombardment and thus enhance your etch rate and control the isotropy/anisotropy
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