How radiation intensity resistant an integrated circuit can be ? At what gamma intensity a microprocessor can operate normally ? Is there any IC that is radiation shielded commercially available ?
Dear Luiz,
welcome
Gamma radiation is a high energy electromagnetic radiation that results in intensive generation of electron hole pairs when incident on a material, which is called transient effect. These generated electron hole pairs are collected by the internal electric field of the pn junctions in the CMOS devices. When they flow in restive parts of the device they can cause drop in the power supply voltage causing change of state and soft error. In CMOS it can cause latch up of the parasitic transistors in the CMOS leasing to a passage of large current that can hurt the CMOS devices.
The the incident intensity of Gamma radiation to cause these effects depends on the technology node and methods used to shield the Gamma radiation.
It is determined on experimental basis. As an example please follow the link:http://www.jos.ac.cn/app/article/app/doi/10.1088/1674-4926/36/11/114008?pageType=en
Best wishes
Is there any IC that is radiation shielded constructed commercialy available ?
Professor Abdelhalim Zekry,
Thank you for your reply, explanation and orientation.
Best regards
Hello Luiz,
for commercially available semiconductor components, please have for example a look here:
https://www.microsemi.com/document-portal/doc_view/123629-high-reliability-radiation-hardened-semiconductors
or here ("product tree" on the right leads to the products):
https://www.st.com/en/space-products.html
The actual problem when trying to buy these devices for use on a laboratory level might be to find a distributor who sells less than a whole pallet. However, some manufacturers have a very lab-friendly way of offering samples.
BTW, in this context "radiation" isn't limited to gamma rays but includes alpha particles as well.
Hope this helps.
Dear Joerg,
Thank you very much !
It certainly helps !
I am evaluating the possibility to work with radiation hardened semiconductors (components) in a near future.
Luiz Reina
Recent experiments with N and P channel FETs and their resistance to failure in high dose neutron radiation (~14MeV) indicate that N channel devices are more likely to fail, somewhat surprising as they are more robust electrically. Does anyone know why this should be?
Having a device switched off reduces the damage. So in many circuits devices can have electric fields in them only when really needed.
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