Presently I am implementing solar cell in COMSOL multiphysics 3D time-varying structure. Kindly suggest me for the basic parameters that can be evaluated from a simulation model for concluding the solar cell efficiency. It will also be really helpfull If any researcher may please provide with a basic implemented module in COMSOL 5.3a multiphysics
Dear Mayank,
Welcome,
I would like to ask why do you complicate the problem by solving the 3D transient characteristics of the solar cell? The solar cell is effectively a large area device and one can define the material average behavioral parameters such as mobility, carrier concentration, doping concentration in the lateral direction parallel to the junction. So, normally one dimension vertical to the junction is sufficient to solve for the solar cell and then one can divide the the solar cell into parallel combinations of nearly one dimension solar cell as i did previously in the paper: Article A distributed SPICE-model of a solar cell
However you have to know
The semicondcutor layer parameters such as Doping profiles, mobility profiles, lifetime profile, energy gap, epsilon, the dielectric consatnt, the absorption coefficient alpha or the extinction coefficient,
You need to supply the device geometry,
You need to supply the boundary conditions and initial conditions.
You have to apply light and voltage.
You solve for I-V in dark and illumination or any required performance parameters.
For the exact procedure please follow the tutorial: https://www.comsol.com/model/si-solar-cell-1d-35661
In principle you solve the semiconductor equations in the different layers of the structure.
Best wishes
Hi Mayak,
You can take some help from the following papers:
https://ieeexplore.ieee.org/abstract/document/8851185
Article Numerical simulation of heat distribution in RGO-contacted p...
Good luck with the modeling.
Regards,
Prateek
Dear Mayank,
Welcome,
I would like to ask why do you complicate the problem by solving the 3D transient characteristics of the solar cell? The solar cell is effectively a large area device and one can define the material average behavioral parameters such as mobility, carrier concentration, doping concentration in the lateral direction parallel to the junction. So, normally one dimension vertical to the junction is sufficient to solve for the solar cell and then one can divide the the solar cell into parallel combinations of nearly one dimension solar cell as i did previously in the paper: Article A distributed SPICE-model of a solar cell
However you have to know
The semicondcutor layer parameters such as Doping profiles, mobility profiles, lifetime profile, energy gap, epsilon, the dielectric consatnt, the absorption coefficient alpha or the extinction coefficient,
You need to supply the device geometry,
You need to supply the boundary conditions and initial conditions.
You have to apply light and voltage.
You solve for I-V in dark and illumination or any required performance parameters.
For the exact procedure please follow the tutorial: https://www.comsol.com/model/si-solar-cell-1d-35661
In principle you solve the semiconductor equations in the different layers of the structure.
Best wishes
in principle, you need the basic electrical parameters that you can simulate a two diode model. Typically, it can be done really simply. However, in case that you want to detailed analysis and non-uniform distribution and dive into the metallization etc, of course, a 3D would be better (in my opinion analytical models can do the same with less effort and no costs).
You need some basic parameters of the two diode model. You can find an example in one of the tables given in this publication:
Article Optimum PV module interconnection layout and mounting orient...
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