I hope you are doing well. I need your suggestion on PR stripping during UV soft mold imprinting directly from a silicon wafer. After making the silicon wafer mold by using the silicon wafer fabrication process.
I modified the surface with releasing agent.
Try to do UV soft imprinting directly from the silicon wafer mold.
But I am facing stripping of PR from the silicon wafer.
Could you suggest to me some method to overcome this issue?
I don’t want to use PDMS due to the shrinking issue.
Here is my method to make the silicon wafer.
📷Cleaning with piranha (H2SO4+H2O2).
📷Heating 110 0C for 3 minutes.
📷PR (AZ 10 XT).
📷Spin coating 2000~3000 rpm.
📷Bake 110 0C for 3 minutes.
📷Expose :300 mJ, 5mW/cm2for 60 sec.
📷Develop: (AZ 300 mif) 5~7 minutes.
📷Bake 150 0C oven for 5 minutes.
📷hard bake 110 deg for 6 hours.
📷Releasing agent dip for 20 minutes and dry for 24 hours under
room temperature.
📷Then did the UV imprinting.
📷Issue PR is stripping from the silicon wafer during soft molding.
If yours is an adhesion problem between AZ photoresist and silicon substrate, I may suggest to use an oxygen plasma strip before coating.
regards
Actullay we used HDMS for adhesion but delamination is still happening. Is there any to stop delamination during soft molding?
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