I have a question from Darya Khanto to share here. Hope to have more experts feedback to his question and also benefit to others.
Prof: need suggestion
My device stucture is PIN
ITO/NiOx/CsPbI2Br/ZnO/C60/Ag
NiOx(2-Methoxyethonal)
CsPbI2Br( DMSO)
ZnO %50 , IPA
C60( DCB)
Jsc is improved upto 15
before these solvent i use NiO in Ethonal and ZnO also in Ethonal
But Voc is still bad.
There is one reference below:
https://pubs.acs.org/doi/10.1021/jacs.7b13229
They have a similar device structure to Darya's, but they use FTO as an transparent electrode. The workfunction of FTO is diffetent from ITO. Therefore the device performance is very different. As Darya noticed that Voc is related to it.
Hope there are some feedback and also Darya's question could benefit for others.
Best wishes
Xuhua
Darya what is the other solar cell parameters? The open circuit voltage and the FF.
It would be also helpful to see the dark and illuminated I-V curves displayed together. If the NiOx builds ohmic contact to the ITO or FTO with low ohmic contact then this interface will not affect the open circuit voltage. If you doubt that the difference is coming from the such layer you can measure its I-V curve alone.
Best wishes
Prof: Abdelhalim abdelnaby Zekry sorry for late reply
Voc=0.976
FF=61.7
Jsc=15.7
PCE=9.6
I didn't check Dark I-V curve
Dear Darya,
welcome,
Happy that you replied me.
What is the values of Rs ,Rsh, the ideality factor n and the reverse saturation current. Instead as i said before you can display typical dark and illuminated I-V curves.
As for the values you displayed, the most important point is the relatively low fill factor. This points out relatively high series resistance.
Waiting for your reply
Best wishes
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