We are working with P3HT OFETs. We have used degenerate n-Si as substrate, a thin layer of PMMA (10 mg/ml in chlorobenzene, 1000 rpm for 30s ) over it, and a thin film of P3HT (3 mg/ml in xylene, 2000 rpm for 2 min) over PMMA. We have deposited Al for source and drain using shadow masking over P3HT layer. For gate contact we are directly depositing Al over earlier protected n-Si by shadow masking, but we are not getting desired FET I-V and C-V characteristics. Is there anything wrong in the process? Are we missing some important steps?