Dear all,

I am not chemist and I can't really find the answer to my question in the litterature.

Could anybody suggest me a recipe for a non-selective wet etching of InGaAs and InP with similar etch rates? If possible I would like to avoid Brome based mixtures.

I was wondering if mixing in the same solution mixtures of H2SO4:H2O2:H2O (etching InGaAs) and HCl:H2O (etching InP) would do the trick. Any chemist could confirm?

Thanks a lot for your help.

Thibault

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