Dear Colleagues, I need small explanation for nanowires growth with sputtering. Why was nanowires growth used rarely for nanowires growth? is there any difficulty using in sputtering for nanowires growth? Please reply me.
For patterned nanowires growth you need a desired ultra thin mask through which required geometry can be grown.
Ultra thin mask is very difficult to fabricate and handle(500 nm thick) , also for thicker masks you will not able to get the nanowire growth as the sputtered material will not able to reach to the substrate from the thick mask.
Irregular and random oriented nanowires can also be synthesized using sputtering but they can only be used for characterization and it is very difficult to use them directly.
http://www.sciencedirect.com/science/article/pii/S0925963503002747
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