There are lot of researchers working on Hafnium and Zirconium oxides using atomic layer deposition. To avoid leakage, what could be the minimum thickness (not EOT) of HfO2 or ZrO2 as gate dielectric of FET?
Miguel Henrique Boratto
Hi Mohi,
Low leakage currents and high performance FETs were obtained with ZrO2 with 10nm thickness (obtained by ALD) (reference [1]) and HfO2, with thickness as low as 13nm, also obtained by ALD (reference [2]).
Simulations show HfO2 and other dielectrics at several thicknesses and present considerable leakage reduction compared to SiO2 even with few nanometers thickness (
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