Please suggest different characterization techniques employed in knowing/ evaluating the growth steps (probably step-flow) in contest to bulk SiC crystals grown using Physical Vapor Transport (PVT) technique. Please do share related literature.
If you can handle the deposition substrate, the best way is to use X-ray reflectometry.
It is used to determine thickness, density, and roughness for single and multilayer stacks on semiconductor wafers; it might perform on both crystalline and amorphous materials.
It gives growth information like thickness, mismatching deposition pathway, and even interlayer formed compounds in the PVT experiment.