I deposit metal(Ag or Au ) film (100nm) on silicon and then use annealing to diffusion into silicon. An oxide layer was found between metal and silicon in TEM. Before depositing metal, I have already cleaning silicon with HF. Furthermore, I made the cavity in the silicon.
What principle can explain this phenomenon or the literature can refer to
Nina Feldhofer
How do you deposite the metal?
If you do it via sputtering I would suggest to use an etching process before deposition.
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Lee Ghun-Jui
Au film use E-gun, and Ag film use DC-sputter. Before deposition metal film, I have already etching silicon dioxide use by HF. And the annealing process is in a nitrogen atmosphere. I think the silicon dioxide (in TEM)
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