We have created several variations of our MEMS gyroscope, out of highly p-doped silicon. The natural frequencies are off by +7% compared with our simulations, and we don't know why. Is it the material properties, i.e. Young's Modulus + Poisson ratio? We tried looking in the literature for these values, but they don't explain our frequency differences. We also measured the geometry of our devices, but everything is within tolerance.
Would it be of any help?
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 19, NO. 2, APRIL2010 229
What is the Young’s Modulus of Silicon?
Matthew A. Hopcroft,Member, IEEE, William D. Nix, and Thomas W. Kenny
https://sites.engineering.ucsb.edu/~sumita/courses/Courses/ME141B/HopcroftJMEMS.pdf
Measurements have been made of the temperature dependences of the electrical resistivity and Hall coefficient in samples of n‐ and p‐type silicon having impurity concentrations in the 1018 to 1020 cm−3 range. The resistivity data extend from 4° to 900°K, and the Hall data from 4° to 300°K. The results exhibit two noteworthy features: viz., (1) a hump or maximum in the resistivity vs temperature curves at or slightly below the degeneracy temperature in each sample, which is most pronounced in the least heavily doped samples and gradually fades out as the impurity concentration increases, and (2) an extension of the positive dependence of resistivity on temperature below the hump or degeneracy temperature to surprisingly low temperatures in each sample.
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