This question is related to my previous one !
I wonder if amorphous silicon can form intermediately another oxide than SiO2, due to better diffusion of O2 into non crystalline structure.
Thanks!
https://www.researchgate.net/post/How_can_I_interpret_many_oxidation_waves_on_amorphous_silicon_TGA
A am not an expert in this field. However I remember that it is possible to apply thin layers of SiO (monoxide) on any substrate by CVD. Sorry I do not remeber the source.
Hi Julien,
under/over stoichiometric silicon oxide can be found during thermal oxidation and reduction of silicon due to the diffusion of O2 in silicon and the oxide itself.
I'd also like to bring to your attention some publications about oxidation behaviour of silicon nanowires.
I'd be happy to discuss further.
Cheers!
Article A new model of the thermal growth of a silicon dioxide layer
Article Modelling of the oxidation of Suspended Silicon Nanowires
Article Modeling stress retarded self-limiting oxidation of suspende...
Article Enhanced reduction of silicon oxide thin films on silicon un...
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