Hello,
I have been trying to make a p-type selective emitter by BBr3 tube diffusion through a nitride/oxide nitride mask experimentally. The idea was to mask whole wafer, open the areas for metallization with laser, perform BBr3 source tube diffusion and obtain uniform shallow and low doped region under masking, deeper, highly doped emitter in unmasked regions.
As further experimentation seems impossible due to corona emergency I am looking into a simulation method for my quest.
Is there any simulation model for boron diffusion which I can modify for described purpose?
Thank you!
Dear Sona,
Hope you are well!
You can use TCAD SILVACO simulator.
But you can also use analytical formulas used in the the books of semicondcutor technology such as the book Vlsi technology sm sze.
Best wishes
Dear Sona,
Hope you are well!
You can use TCAD SILVACO simulator.
But you can also use analytical formulas used in the the books of semicondcutor technology such as the book Vlsi technology sm sze.
Best wishes
Dear Sona,
Try the old S-Supreme process simulator (from Silvaco) or better Sentaurus Process (now from Synopsis).
Sentaurus Process. In most EU universities you can access Synposis software at affordable price via Europractice.
You can use of ATLAS Module of Silvaco software or semiconductor physic in COMSOL multi-Physics software
Dear Sona,
I think that the analytic model is the best way to model diffusion process for solar cell doping. You can also use COMSOL Multiphysics as a simulator tool. The SILVACO is a professional tool, but you must even use the examples to be able to build exactly your correct program. I would suggest looking for some good examples in the help of silvaco. package,
good luck.
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