In a 3D NAND structure, I would like to analyze how much of the electrons in the Charge Trap Flash (CTF) layer tunnel out into the gate oxide or tunneling oxide after programming. However, using the ebarrier.tunneling output in the program.des file does not clearly indicate whether the tunneling occurs specifically from the CTF into the oxide layers. Could anyone suggest a method or workaround to track or observe electron tunneling from the CTF layer to the oxide in TCAD Sentaurus?