Please anyone let me know whether I can use a III-V semiconductor material and/or their alloy composition e.g. AlxGa1-xAs, GaAs, GaN etc. as a window or buffer layer material in a CIGS, CdTe, or CZTS absorber based thin film solar cell or not?
I think you must know the structure, electrical and optical properties for this layer such as lattice constants and energy gap value, after that you can choose the suitable compounds to use it as a buffer or window layer.
The most common compounds for CIGS are ZnS, ZnSe, ZnO, (Zn,Mg)O, In(OH)3, In2S3, In2Se3, InZnSex, SnO2, and SnS2. They can be as an alternative to more toxic CdS
A priori its possible if you respect some conditions related to band gap engineering, conductivity, optical agreement and so on. But the main problems are the cost of III-V compounds and the required temperatures for the deposition of such a compound..
Yes it is possible from the conceptual point of view. As an example researchers combined two layer perovskite solar cell structure with three five compounds. According to the authors, the cells are based on an architecture of two perovskite layers (CH3NH3SnI3 and CH3NH3PbI3−xBrx), incorporating GaN, monolayer hexagonal boron nitride, and graphene aerogel. For more details please follow the link:http://www.nature.com/nmat/journal/vaop/ncurrent/full/nmat4795.html
However i have the same believe as Anton. Window layers for CIGS absorber solar cells can be made from two six compounds with large band gap such as ZnS rather than the three five compounds. For more details please refer to the link:http://www.sciencedirect.com/science/article/pii/S0040609004016062