hi, clean process is an important step in order to remove contamination. for example,in the case of Si substrate 5per cent HF is important to remove the native oxyde layer (isolant).
Before film deposition a wet clean can be done with acetone/IPA to remove grease and a oxgen plasma is recommended to remove the hydrocarbons on the surface. To get adhesion a sputter etch can be done in the deposition chamber to remove chemisorbed water. This will improve adhesion of thin films considerably.