Is it correct to use the "Caughey-Thomas Mobility Model" in the simulation of MOSCAP semiconductor devices? this model is field-dependent and decreases the mobility of the carriers.
Xiaoliang She
I think that you should learn about working principle of the MOSCAP semiconductor devices. The choice of physical model depends on the operating principle of the device. I was under the impression that the model took into account high-field velocity saturation, though factors affecting mobility include SRH and recombination as well.
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