Since there is no electric field i.e. open circuit and aluminium contacts, is generation-recombination noise possible in a p-type silicon photoresistor upon illumination? From the references I have seen, it seems that for generation-recombination noise, development of the electric field within the photoresistor is important.

Ps. the setup is a 4 mm^2 square silicon wafer with two contacts being illuminated from the backside.