I am simulating an SnS based solar cell, which consists of the SnS/SnO2 interface. Increasing the defect density at SnS/SnO2 interface decrease the open circuit voltage; however, also increases the FF. The reduction in Voc is attributed to increased recombination at the interface. But the reason behind the increment in FF is not clear. I request experienced researchers to help me out the to find reason behind the decrease in FF.
Dear Rahul,
I came late to this question. I hope hat my answer will be useful for the other researchers who observed such effects.
I agree with you that the increases in the defects at the interface increases the recombination rate and thereby the reverse saturation current increases causing the decrease in the the opencircuit voltage.
The fill factor is affected by the ideality factor n of the junction. It is clear from your the shape of the I-V curve that n also changes with the concentration of the interlace states. To prove this prognosis you need to extract n by curve fitting.
The other parameter which is changed by the interface states is the series resistance. Also to verify this hypnosis you must also extract Rs.
For the I-V curve of the heterojunctions please follow the link: Article M. Abdelnaby, A. Zekry, F. Elakkad and H. F. Ragaie, “ Depen...
Dear Rahul,
I came late to this question. I hope hat my answer will be useful for the other researchers who observed such effects.
I agree with you that the increases in the defects at the interface increases the recombination rate and thereby the reverse saturation current increases causing the decrease in the the opencircuit voltage.
The fill factor is affected by the ideality factor n of the junction. It is clear from your the shape of the I-V curve that n also changes with the concentration of the interlace states. To prove this prognosis you need to extract n by curve fitting.
The other parameter which is changed by the interface states is the series resistance. Also to verify this hypnosis you must also extract Rs.
For the I-V curve of the heterojunctions please follow the link: Article M. Abdelnaby, A. Zekry, F. Elakkad and H. F. Ragaie, “ Depen...
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