I have simulated a cerium oxide ETL based perovskite solar cell (CeO/PCBM/Perovskite/Spiro-MeOTAD). And the same is illuminated from the front that is from ETL side. The absorption coefficient, i.e., wavelength dependent absorption coefficient has been incorporated during simulation. I found some discrepancy in the results, so I need the help of some of the experienced researcher to understand the same whether it is a discrepancy or there is some physics behind it.
Increasing the thickness of CeO increases the JSC whereas EQE is decreased. Moreover, logically increasing the thickness of CeO should reduce the current density due to parasitic absorption in CeO, as absorbance is directly related to thickness and absorption coefficient. What could be the reason behind the increase in JSC. I have also obtained the recombination rates inside the device, but nothing is in the support why Jsc is increasing.
Thank!
Dear Rahul,
welcome,
would you please display typical results of your solar cells. It is so that as the incident solar radiation is constant and the active area of the device is constant, then as the external quantum efficeincy decreases the shortcircuit current current by definition decreases. As check you have to calculate the short circuit current from input solar radiation and the external quantum efficeincy.
The question, how you do calculate the short circuit current?
Best wishes
Respected Abdelhalim Zekry Sir,
Thanks for your response, following are the results I am getting from SCAPS simulator.
Red- CeO (60 nm with n type doping 1x10^15 /cm^3 )
JSC (22.875606 mA/cm2), Voc (1.0438V), FF (70.58%) and PCE (16.85%)
Blue- CeO (60 nm with n type doping 5x10^18 /cm^3 )
JSC (21.866520 mA/cm2), Voc (1.0450V), FF (75.18%) and PCE (17.18%)
Light Green- CeO (120 nm with n type doping 1x10^15 /cm^3 )
JSC (24.764667 mA/cm2), Voc (1.0417V), FF (66.22%) and PCE (17.08%)
Skyblue- CeO (120 nm with n type doping 5x10^18 /cm^3 )
JSC (22.626031 mA/cm2), Voc (1.0462V), FF (74.95%) and PCE (17.74%)
Increasing the doping increases the FF, attributed to lower resistance at high doping. Increasing the thickness of CeO from 60 nm to 120 nm significantly increases the current density from 22.9 to 24.8 mA/cm2. Logically it should decrease the current density due to parasitic absorption in it. Since it is not an active layer, it is just ETL standing above the perovskite layer.
Dear Rahul,
please answer my question how do you calculate the short circuit current?
This is one thing. The other thing is that the light green cell has the lowest pce, fill factor and maximum power consisting with the oxide layer behavior. I would like that you calculate the short circuit by integrating the CE multiplied by the incident photon flux at the different wavelengths.
Best wishes
Respected sir,
Thanks for your response. All the results provided above are the results obtained using simulator and I haven’t performed any calculations. But I’ll do the same as suggested by you..
Thanks for your time and considerations
I think, with increasing the thickness of ETL, the number of free charge carrier increases (not electron-hole pair) hence the Jsc also but due to higher the total cell thickness compare with carrier recombination length so that recombination loss take place. Though the recombination rate is same but amount of recombined carriers were higher than previous one.
Dear Dr. Rahul Pandey.
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