Hi!
I was asked to present time dependent resistive switching behavior of my device and told to learn Impedance spectroscopy. I am wondering would not it be possible to show time dependent of memory gap behavior using pulse voltage measurement. Because as far as I know we can able to send voltage pulses with different frequencies?
What are the difference between impedance spec and voltage pulse measurement?
Thanks a lot
Dear Canan Babuc ,
Hope you are well!
Thank you for inviting me to share in answering your question.
I will give a conceptual answer to your question which you can apply it to perform your test on your resistive switching device.
For characterizing the electrical performance of any electronic or electrical device
you carry out the following:
You measure it static I-V characteristics to see how it reacts under static conditions. In this concern one can get either linear and nonlinear I-V curve.
Only the ohmic resistances give a linear I-V curve. Most electronic devices result in a nonlinear I-V curve for example the diode and the transistor.
- You can measure its dynamic performance or as stated its switching performance by applying either a consatnt current pulse or a constant voltage pulse and measure the corresponding response which is the waveform of the resulting device voltage or device current.
Normally there will be shaping and distortion of the pulses when applied on the device.
The most important effect is the delay time, the rise time, the storage delay time and the fall time. The value of these parameters depends on the speed of the response to the applied excitation.
Ideal behaved devices do not make any shaping in the input pulses.
- The final method is the small signal behavior which is intended to characterize
nonlinear devices around certain DC operating point.
In this test one set a DC operation point of the device and then measure its impedance as a function of frequency. The resulting impedance plot represents the socalled impedance spectroscopy.
The impedance spectroscopy leads to the impedance equivalent circuit of the device. One can get the parasitic reactive elements that is the cause of the switching delays.
These characterizations are related to each other as they belongs to the same device.
I would like that you read the paper on the link where i made the three characterizations: Article A distributed SPICE-model of a solar cell
Best wishes
Pulse response would directly yield the value of time constant of the resistive device. The impedance spectroscopy would show peak in the spectroscopic plot or a semi circular arc in the complex plane plot ( Z" vs Z' plot) centered around the frequency ~ 1/(time constant). It there are more time constants the decay response in time domain would not be a single exponential; such behaviour would be seen as humps in the immittance complex plane plots. Both informations would be complementary as frequency domain informations can be extracted from time domain information by using Fourier transform. However, working in frequency domain ( impedance spectroscopy) seems a bit easier to implement and interprete.
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