One simple way is using a quarz ampoule with a "nec" where your sample is placed in one extreme and the doping material in the other. Put the ampoule in a horizontal furnace, the sample inside and the doping material out. The temperature gradient will produce a convection stream in the ampoule. By essay and error you can obtain the best temperature gradient wich will depend of the dopand material evaporation point.
Good look.
The most common method of doping semiconductors for device applications (i.e. where a thin surface layer is doped) is ion-implantation. This typically involves the irradiation of the semiconductor with energetic ions of the desired dopant species and a subsequent annealing step to remove radiation damage and activate the implanted dopants.
Thermal diffusion and Ion implantation are two common methods. if you are in Iran you might find access to diffusion furnaces in some universities...
Doping of P in Si is typically done by thermally diffusing P in Si in presence of some gas mixture containing mainly Phosphene (PH3) in the high temperature furnace. Ion implantation is another method which is more precise but costly.
A doping can be perform in a number of ways that is diffusion ion implantation. Doping may be also done during the fabrication of that semiconductor. For example you prepare a thin film of the ZnO which is a semiconductor you may doped a number of element in it by adding different element to it during the powder preparation. Solution can be also chosen to dope the different element.
Doping of Si with P in CVD growth is usually done with addition of Phosphine highly dissolved in carrier gas (Argon or Hydrogen). The Thermal diffusion is also an option but rarely used for epitaxial materials.
The common doping techniques are: solid-state diffusion, ion implantation, and neutron transmutation. For MOSFETs, ion implantation is the technique used.
The dopant is a chemical impurity, which has to satisfy the following criteria: (1) Its valence should be one less or one more than the host semiconductor; (2) The atomic size should be close to that of the host atom - so than the dopant can take a substitutional site; (3) the ionisation energy should be about kT at room temperature.
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