Now I am working on Si substrate and growth nano rod on Si by atmospheric pressure chemical vapor deposition. I have FTIR in range(400-4000)cm-1. After preparation at low temperature, the peak appeared in 410cm-1, but when increased the deposition temperature the peak shift to low wave number. Also when I increased the deposition temperature so more the peak will disappear. However the sample deposition high quality because of I have FESEM and XRD, I think this shift is due to the area under curve of Si-O bound increased. Is this idea right?
Dear Anwer,
From your description, it is not very clear what nanorod you are growing over Si substrate. The peak/band you are monitoring is associated to Si-O? In which ambient (atmosphere) you are growing your nanostructures? It is very difficult to answer your question correctly without these informations.
Check if the nanorod structure gets relaxed and wave number is decreased.
Dear Umapada
thank you for your help
ok i growth of Zno/Si by APCVD we observed the area under the curve of SI-O-Si band increased and shifted to low wave number.the zn-O also shifted when increasing substrate temperature .My question is why in the spectra the peak of Si-O-Si and Zn-O shifts to lower wave number by increasing deposition temperature?
Dear Sha,
Thank you for your clarification. As the FTIR absn. peak associated to SiOx appeare not below 1000 cm-1, I suppose your peak near 410 cm-1 is associated to ZnO (wurtzite), and probably the E2 mode. With the increased deposition temperature, of course your Si substrate will be oxidized more (in O2 ambient), and will produce SiOx.
On the other hand, The E2 mode can change its position with the variation of the stoichiometry of ZnO nanostructures.
You can have a look to the article: DOI 10.1002/pssc.200300000
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