In SRAM design is it possible that the static noise margin is greater than write margin?

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Amit Singh Rajput

i think not.

Sayeed Ahmad

Of course, it is possible.The SNM and Write Margin are two difference performance matrices. SNM is related to the noise disturbance that can flip the cell where as WM related to the ease of writing in the cell. eg. in case of single ended write and read decoupled cells normally SNM is higher as compared to WM.

Hope this help!

Sandip Ghose

Sayeed Ahmad your answer is really helpful. Thanks a lot.