There are several ways to add a doping element during the thermal vapor deposition of a metal oxide. Some common methods include:
Co-deposition: This method involves co-depositing the metal oxide and the doping element simultaneously. This can be done by adding a source of the doping element to the evaporator or by using a precursor that contains both the metal oxide and the doping element.
Post-deposition doping: This method involves depositing the metal oxide first, and then adding the doping element afterwards. This can be done by exposing the deposited film to a gas or liquid containing the doping element, or by thermal diffusion of the doping element into the film.
Ion implantation: This method involves implanting ions of the doping element into the deposited film using an ion beam.
Co-sputtering: This method involves depositing the metal oxide and doping element simultaneously by sputtering from two targets, one for the metal oxide and one for the doping element.
The choice of method depends on the material system and the desired doping level, as well as the equipment and expertise available.
For doping, you need the sources to be evaporated at low power in the same process or you can do this by introducing some gas like oxygen nitrogen into the evaporation chamber. Depending on what element you need as a dopant.