05 February 2025 0 2K Report

I have created SDE script and when simulated structur looks fine. But when moving to S Device I want to get I V Characteristics. I need help in creating the S Device command file and parameter file.

# sdevice.cmd

# Load the mesh file

File {

Grid = "n@node@_msh.tdr"

Plot = "n@node@_plt.tdr"

Output = "n@node@_des.tdr"

}

# Define physical models

Physics {

Mobility( HighFieldSaturation )

Recombination( SRH Auger )

EffectiveIntrinsicDensity( OldSlotboom )

Fermi

Poisson

ElectronTemperature

HoleTemperature

ImpactIonization

}

# Define solution methods

Math {

Extrapolate

RelErrControl

Iterations = 50

Notdamped = 50

Autostep

Coupled { Iterations = 30 }

}

# Define contacts

Contact {

{ Name = "gate" Voltage = 0.0 }

{ Name = "drain" Voltage = 0.0 }

{ Name = "substrate" Voltage = 0.0 }

}

# Define the breakdown simulation

Solve {

Coupled { Poisson Electron Hole }

Quasistationary (

{ Name = "drain" Voltage = 0.0 }

{ Name = "drain" Voltage = 10.0 Step = 0.1 }

)

Save ( File = "n@node@_des.tdr" )

}

# Plot the results

Plot {

Output = "n@node@_plt.tdr"

Potential

ElectricField

CurrentDensity

ImpactIonizationRate

}

# sdevice.par

# Material parameters for GaN

Material = "GaN" {

BandGap = 3.4

Permittivity = 9.0

ElectronAffinity = 4.1

Mobility( Electrons = 1000 Holes = 30 )

EffectiveDensityOfStates( ConductionBand = 2.2e18 ValenceBand = 4.6e19 )

ImpactIonization( Electrons = "GaN_II" Holes = "GaN_II" )

}

# Material parameters for AlN

Material = "AlN" {

BandGap = 6.2

Permittivity = 8.5

ElectronAffinity = 1.9

Mobility( Electrons = 300 Holes = 10 )

EffectiveDensityOfStates( ConductionBand = 4.4e18 ValenceBand = 8.2e19 )

ImpactIonization( Electrons = "AlN_II" Holes = "AlN_II" )

}

# Material parameters for AlGaN

Material = "AlGaN" {

BandGap = 4.0

Permittivity = 8.8

ElectronAffinity = 3.0

Mobility( Electrons = 800 Holes = 20 )

EffectiveDensityOfStates( ConductionBand = 3.0e18 ValenceBand = 6.0e19 )

ImpactIonization( Electrons = "AlGaN_II" Holes = "AlGaN_II" )

}

# Impact ionization models

Model = "GaN_II" {

ImpactIonization( Electrons = "Selberherr" Holes = "Selberherr" )

Parameters = {

An = 2.9e7 Bn = 1.8e8

Ap = 2.0e7 Bp = 1.6e8

}

}

Model = "AlN_II" {

ImpactIonization( Electrons = "Selberherr" Holes = "Selberherr" )

Parameters = {

An = 1.5e7 Bn = 2.0e8

Ap = 1.0e7 Bp = 1.8e8

}

}

Model = "AlGaN_II" {

ImpactIonization( Electrons = "Selberherr" Holes = "Selberherr" )

Parameters = {

An = 2.2e7 Bn = 1.9e8

Ap = 1.5e7 Bp = 1.7e8

}

}

# Define doping profiles

Doping = "UniformDonorDoping" {

Concentration = 5e17

Type = Donor

}

Doping = "Const.GaNCap" {

Concentration = 3e18

Type = Donor

}

# Define contact properties

Contact = "gate" {

WorkFunction = 4.7

}

Contact = "drain" {

WorkFunction = 4.7

}

Contact = "substrate" {

WorkFunction = 4.7

}

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