By co-sputtering and/or doping of metal particles/CNTs/Graphene you can improve the conductivity of TiO2 thin film.
I am limited by temperature (100 ° C), and I have a sputtering machine with a single target, can be possible to do doping of TiO2 on TiO2 target?
With a single target that will not be possible. By doing the same for number of times may give some result.
Oxygen deficiency will greatly improve the film's conductivity. A new paper on this topic has just been published with some very interesting findings. I suggest you read it at the link below:
http://pubs.rsc.org/en/content/articlehtml/2014/ta/c3ta14816e
Thank you for these valuable and well explained answers.
But me I want to control the the doping concentration, so is not useful by buying a new target directly with fixe doping concentration.
In this case, You can made complex target, with different content of components.
We work with sputtered TiO2 all the time and if you treat it with TiCl4 (you can find many publication on this) its electronic properties are vastly improved. Also, as someone said oxygen deficiencies/vacanies will dope it more n-type so you can expect an increase in conductivity (if this is something you have good control over in sputtering).
Thank you for these valuable and well explained answers.
it is possible to improve conductivity of TiO2 sputtered thin film by UV application, to avoid annealing treatment.
you could co-sputter with two targets, one the TiO2 the other a dopant like Zn or Al. Or you could deposit a few monolayers of TiO2, then one monolayer of dopant (or less), and then few monolayers of TiO2 etc. bit tedious, but it is a possibility.
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