Hi,
I am wondering if someone can direct me to an ion implantation forum
My specific query is:
I am learning the SRIM software for simulating ion implantation process. I am however, not finding in the screen (where we give inputs like implanted ions, target to be implanted and its depth, the implantation energy etc.) the option to feed in the value of the implant dose. The spatial distribution of implanted ions in Monte Carlo Simulation apparently is invariant of the dose. The result displays the ion concentration per unit dose, and one can in principle get the absolute concentration by multiplying that output (I men the ion concentration per unit dose) by the actual dose that is used. Things are fine up to this.
The problem is arising in case of sequential implantation recipe with varied energy and dose [a common practice in semiconductor device industry]. One can change the energy halfway during simulation, but changing dose is still not possible. And if we ignore the change of the dose, which dose value should I multiply the final output parameter with?
Please feel free to write if you have some idea or know of some literature / video / another forum. Which might have it. Thanks in advance and really appreciate your help.
Hi,
I think that the best way for resolving your issue is to use the TRIDYN software. It consists of an upgrade of the SRIM code allowing to take into account the dynamic compositional changes of the target material during ion implantation. Furthermore, the fluence can be precisely varied, typically from 10^14 ions/cm² to 10^18 ions/cm². Its use is rather user-friendly.
More information about the software can be found here:
https://www.hzdr.de/db/Cms?pOid=21578&pNid=0
I hope it will help you!
Kind regards
I see your question was asked some months ago, I hope you have found a solution. I have spent much time working with SDTrimSP, which utilizes TRIDYN principles but focuses on modeling surface sputtering
In SDTrimSP you can specify fluence (ion/cm2), energy, molecular beams, etc.
After one simulation, you can extract the depth profile and implant another ion species into the new medium.
In SRIM each implant is a single simulation (because you can only select one ion), you need to string multiple simulations together with a spreadsheet or perhaps python code to get your end result.
If you want to continue using SRIM as your first pass at modeling your implants, I would consider doing the first implant, extracting the depth profile through the ion ranges file and calculating the new density for several "slabs" by multiplying the vertical axis by the fluence for that step. I would then build the updated target in a few layers for a simple slab analysis (bottom left of SRIM GUI). I would then repeat for the rest of your system. If you are working with less than 1E15 ions/cm2 per successive implant, this should give you a good approximation. If you are working upwards of 1E16, significant error may be induced due to highly dynamic sputtering. SRIM can account for sputtering, but it can be challenging to model.
Again, because you are in semiconductor manufacturing, the 4 published tutorials are very useful found in the SRIM file directory.
Let me know if you have any specific questions.
See the following paper for information regarding sputtering for the 3 simulations mentioned in this thread: Article Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIM
Josh
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