Respected sir,
We are making IV measurement setup.
To the Gate of MOSFET, we give voltage in steps (VGS).
and at the same time, we check the voltage at drain (VD) w.r.t. ground.
It is varying but not showing very well linear variation.
I am attaching the file herewith for your reference.
Your kind suggestions and comments will be very much helpful for designing the circuit.
Thanking you, sir
I don't get it - IV implies Id versus VGS ? Then voltage between gate and source and voltage between drain and source .
For current use an ammeter at the drain and Vds: https://www.google.ca/search?q=transfer+characteristics+of+MOSFET+circuit&source=lnms&tbm=isch&sa=X&ved=0ahUKEwi41MzkivHgAhVJC6wKHfRgCYEQ_AUIDigB&biw=1366&bih=654#imgrc=ZEN0NvoREN77uM:
Dear Suhail,
Addition to the above researchers suggestions, you need to have two source-measure-units i.e. Keithley 2400 if you don't have a semiconductor analyser equipment in your lab. You can use a program to control Ids against Vds for output characteristics and Ids against Vgs for transfer characteristics. You need to make sure that two equipment must have common ground connection to the transistor.
Hope it helps
Xuhua
Thank you Respected Aparna Sathya Murthy Madam, Kalyan Acharjya Sir, Xuhua Wang Madam.
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