Dear all
I want to simulate (large signal -source/load pull counters- and small signal) GaN HEMT die “CGHV1J070D“. I don’t have access to specific process (CREE V4 Process) /PDK of the device. Therefore, I’m going to run the simulation without using the process and only based on the specs given in the datasheet.
Best regards
Respected Sir,
By default the ADS device libraries consist only GaAs FET's and HEMT's. But if you want to use GaN device for your work there is one option.
If you know the device number download the datasheet.
In datasheet you will find the S parameters of the device for wide range of frequencies at various biasing Vds and Ids. You can select the biasing point as per your project requirement.
Next copy the S parameter table of respective bias Vds and Ids and paste in notepad.
then save the notepad with extension ".s2p"
Then in ADS while designing the circuit you can select a device in Data input device library. Then double click on it go to its properties it will ask for a path where the s2p file is saved. select the device path and click save and ok
Now the unknown device in your circuit will possess the S parameters of the GaN device you wanted.
But a note to remember is that you can just use this method to simulate and get results. From fabrication point of view this may not help you.
Hope you got some helpful information!!!
yes I agree but, if we want to simulate for momentum how to do? how can we add s2p files in layout window?
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