Dear Habib:

You can benefit from this valuable thesis.

Keywords of it:

Impurity photovoltaic effect, silicon solar cells performances, SCAPS Simulator.

Summary:

In this thesis researchers study one of the third generation solar cells called impurity photovoltaic effect in order to improve silicon solar cells performances .

Also investigate numerically the potential of the IPV effect in silicon solar cell doped with sulphur as novel IPV impurity.

And study the influence of light trapping and certain impurity parameters like impurity concentration and position in the gap on the silicon solar cell performances. (Short circuit current density Jsc, open circuit voltage Voc, conversion efficiency η and quantum efficiency QE).

The results show that the PV parameters of silicon solar cells are drastically reduced when Et is located near the middle of the band gap.

They found also that the incorporation of sulphur impurity in the base layer does increase the short circuit current density and efficiency when the carrier concentration is low, especially for sulphur impurity located at 0.18 eV

below the conduction band. The IPV effect gives an extension of the infrared response of the solar cell between 800 to about 1300 nm due to the enhancement of the sub-band gap absorption mechanism. A good light trapping is very important to obtain a high solar cell performances based on the IPV effect.

I hope it will be helpful .

Hassan Nasser dear, this thesis does not have any information on concentrated light

Dear Habib:

I forgot to mention the following information about what's the SCAPS Simulator can simulate:

SCAPS (a Solar Cell Capacitance Simulator) is a one dimensional solar cell simulation programme developed at the

Department of Electronics and Information Systems (ELIS) of the University of Gent, Belgium.

Several researchers have contributed to it's development:

Alex Niemegeers, Marc Burgelman, Koen Decock, Stefaan Degrave, Johan Verschraegen.

The was originally programme is developed for cell structures of the CuInSe2 and the CdTe family. Recent developments make the programme now also applicable to crystalline solar cells (Si and GaAs family) and amorphous cells (a-Si and micromorphous Si)

The most recent version, SCAPS 3.8, may 2020, includes:

1-- up to 7 semiconductor layers

2-- almost all parameters can be graded (i.e. dependent on the local composition or on the depth in the cell): Eg, chi;, epsilon;, NC, NV, vthn, vthp, µn, µp, NA, ND, all traps (defects) Nt.

3-- recombination mechanisms: band-to-band (direct), Auger, SRH-type.

4-- defect levels: in bulk or at interface; their charge state and recombination is accounted for defect levels, charge type: no charge (idealisation), monovalent (single donor, acceptor), divalent (double donor, double acceptor, amphoteric), multivalent (user defined).

5 -- defect levels, energetic distributions: single level, uniform, Gauss, tail, or combinations.

6-- defect levels, optical property: direct excitation with light possible (impurity photovoltaic effect, IPV).

7-- meta-stable defects: transitions between acceptor and donor configurations for known meta-stable defects in CIGS: the V_Se and the In_Cu defect; also custom set meta-stable transitions implemented.

8-- contacts: work function or flat-band; optical property (reflection of transmission filter).

9-- filter tunneling: intra-band tunneling (within a conduction band or within a valence band); tunneling to and from interface states.

10-- generation: either from internal calculation or from user suppied G(x) file.

11-- illumination: a variety of standard and other spectra included (AM0, AM1.5D, AM1.5G, AM1.5Gedition2, monochromatic, white,...).

12-- illumination: from either the p-side or the n-side; spectrum cut-off and attenuation.

13-- working point for calculations: voltage, frequency, temperature.

14-- the programme calculates energy bands, concentrations and currents at a given working point, J-V characteristics, ac characteristics (C and G as function of V and/or f ), spectral response (also with bias light or voltage).

15-- batch calculations possible; presentation of results and settings as a function of batchparameters.

16-- loading and saving of all settings; startup of SCAPS in a personalised.

17-- configuration; a script language including a free user function.

18-- very intuitive user interface.

19-- a script language facility to run SCAPS from a "script file"; all internal variables can be accessed and plotted via the script.

20-- a built-in curve fitting facility.

21-- a panel for the interpretation of admittance measurements.

22-- grading of all parameters can be set from file; more analytic "grading laws" implemented.

23-- new analytic models for the spectrum, the generation and the optical absorption coefficient.

24-- A description of the programme, and the algorithms it uses, is found in the literature:

1-- M. Burgelman, P. Nollet and S. Degrave, "Modelling polycrystalline semiconductor solar cells", Thin Solid Films, 361-362, 527-532 (2000). (This is the basic reference for SCAPS) (Full text, pdf).

2-- M. Burgelman, K. Decock, S. Khelifi and A. Abass, "Advanced electrical simulation of thin film solar cells", Thin Solid Films, 535 (2013) 296-301 (Full text, pdf).

3-- K. Decock, P. Zabierowski, M. Burgelman, "Modeling metastabilities in chalcopyrite-based thin film solar cells", Journal of Applied Physics, 111 (2012) 043703. (Full text, pdf).

4-- K. Decock, S. Khelifi and M. Burgelman, "Modelling multivalent defects in thin film solar cells", Thin Solid Films, 519 (2011) 7481-7484. (Full text).

5-- M. Burgelman and J. Marlein, "Analysis of graded band gap solar cells with SCAPS", Proceedings of the 23rdEuropean Photovoltaic Solar Energy Conference, (Valencia, E, september 2008), 2151-2155, WIP, M�nchen, 2008. (This describes graded solar cells, introduced in SCAPS2.8) (Full text, pdf).

6-- J. Verschraegen and M. Burgelman, "Numerical modeling of intra-band tunneling for heterojunction solar cells in SCAPS", Thin Solid Films, 515 (15), 6276-6279 (2007) (This describes tunneling, introduced in SCAPS2.7) (Full text, pdf).

7-- S. Degrave, M. Burgelman, P. Nollet, "Modelling of polycrystalline thin film solar cells: new features in SCAPS version 2.3", Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion (Osaka, Japan, may 2003), pp. 487-490, WCPEC-3, Osaka, 2003.

9-- A. Niemegeers and M. Burgelman, "Numerical modelling of ac-characteristics of CdTe and CIS solar cells", Proc. 25nd IEEE Photovol-taic Specialists Conference (Washington D.C., april 1996), pp. 901-904, IEEE, New-York, 1996 (Full text, pdf).

On the other hand:

You can simulate concentrated photovoltaics system via MATLAB:

As this pdf article:

"Modeling and Simulation of Hybrid Concentrated Photovoltaic/Thermal System" by researchers:

H. I. Abdelkader, A. Y. Hatata, A. Elansari, M. A. Abo-Elsoud.

Also you can make a heat transfer analysis carried out with the use of COMSOL Multiphysics software applied to a new solar concentrator, defined as the Compound Parabolic Concentrator (CPC) system.

As this pdf full text article:

"Modelling and Numerical Simulation for an Innovative Compound Solar Concentrator: Thermal Analysis by FEM Approach".

I hope it will be helpful...

With best wishes...