I am doing the TCAD simulation of MOSFET devices. In such devices, an electrical dipole layer exists at the oxide/silicon interface. I was wondering if anyone would tell me how to set this dipole layer and tune its strength in TACD.
you can read the following:
1. https://ieeexplore.ieee.org/iel7/6245517/6507303/08801920.pdf
2. https://air.uniud.it/retrieve/handle/11390/1068321/37861/2015_TED_Bandiziol_versione%20caricata%20su%20IRIS.pdf
3. https://aip.scitation.org/doi/10.1063/5.0037378
4. https://iopscience.iop.org/article/10.1088/2053-1591/ac1d68/pdf
Dear Saad,
The CONTACT statement can also be used to specify barrier and dipole moments at the interface.
Refer to this article for more details:
https://www.silvaco.com/wp-content/uploads/content/kbase/TED_SuperHeterojunction_Published.pdf
B.R.
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