Dear Jess Jian ,

You may find the solution of your problem by referring to the manual of the Sentaurus:https://www.researchgate.net/profile/Nabil-Ashraf/post/How-to-control-the-slope-of-output-characteristicsId-Vd-of-a-GAA-nanowire-FET-which-shows-flat-saturated-region/attachment/5de3c15bcfe4a777d4f64432/AS%3A831293646458882%401575207258619/download/Synopsis_Sentaurus_user_manual.pdf

Best wishes

see the Sentaurus™ Device User Guide Version K-2015.06, June 2015

How can you do to write this code ?

I'm trying to create a simple SiC device (only SiC n-doped) But I've never use Sentaurus, and then, it has been too hard to create.

Dear Abdelhalim abdelnaby Zekry ,

Thank you for replying me，I have referenced the user manual，so I tried many parameter modules(includes:Mobility(Doping Dependence High Field Saturation Enormal ),EffectiveIntrinsic Density(OldSlotBoom),Recombination(),Fermi,etc......).

In the material of silicon, I always successfully simulated the device. So, I don't know why I just changed material ,then the plot of device didn't converage.

Dear Jess Jian ,

It may be that SiC is a widegap material and that its intrinsic concentration is very small and may cause over flow by dividing on it. So, I think you have to pat attention to this issue and search in the literature how it has been solved.

The second issue is that you simplify the physical parameters and use the simplest possible model for the material parameters till you get a solution and then start to use the complicated models one by one!

best wishes

Dear Hadi Jabbar Alagealy ,

Thanks for suggestion,I had read it.I will continue to study！

Dear Renato Beraldo ,

Maybe you can create simple device with silicon ! after you check the device work,you can change the material. By the way , you can read the tutorial of Sentaurus,it has a little examples.I am also a beginner, work hard together！

Dear Abdelhalim abdelnaby Zekry ,

Thanks for suggestion,I really didn't consider about intrinsic concentration is very small problem. And then, I will use the simplest model to check the device.Thank you for your guidance and support.Wish have an awesome day!

Dear Jess Jian, Thank you.

Nowadays, I got some knowledge about Senaturus and how to provide codes related to SPROCESS and SDEVICE.

I'm trying to simulate the SiC-4H Schottky from the examples library, but there is an error with two syntaxs (during SDEVICE running)

Region "SiliconCarbide_1" (Material "SiliconCarbide"): UNDEFINED model "Scharfetter"

Region "SiliconCarbide_1" (Material "SiliconCarbide"): UNDEFINED model "Auger

Have you ever seen something about that ??

Dear Renato Beraldo ,

This checking procedure can be switched off by the keyword

-CheckUndefinedModels in the Math section.

Dear Jess Jian, I got the solution for this problem.

For silicon carbide devices, we must use the file "SiC.par" (from sentaurus folder - Power) to use inside the program related to SDEVICE

But another problem takes place..

In this case :

Error: No valid electron BarrierTunneling mass has been specified for region 'SiliconCarbide_1'. !

Best regards.