I have the example 12 of silvaco atlas in wich there is a tandem solar cell.
I am asking how to separate top cell from bottom cell to get single cell simulation.
I tried to cut the top/bottom cell directly from the code with necessary modifications but i got stranger results, such as tandem Voc is deferent from the sum of singl cells Voc.
After having a good cup of coffee I found the solution .... it was as simple as ABC ... I have to short circuit the com contact with the anode or the cathode directly in the Tandem code
elec num=3 name=com y.min=0.725 y.max=0.735 mat=ITO
Will be
elec num=3 name=cathode y.min=0.725 y.max=0.735 mat=ITO
For top cell simulation
And
elec num=3 name=anode y.min=0.725 y.max=0.735 mat=ITO
For the bottom cell simulation ...
For more clearance this is the principal tandem deck and the two single cell decks for top and bottom cells.
1- Tandem code :
# (c) Silvaco Inc., 2018
go atlas
# Structure Generation
mesh
x.m l=0 s=2.5
x.m l=10 s=2.5
y.m l=-0.5 s=10
y.m l=0 s=0.1
y.m l=0.5 s=0.002
y.m l=0.51 s=0.002
y.m l=0.61 s=0.02
y.m l=0.71 s=0.002
y.m l=0.725 s=0.002
y.m l=0.73 s=0.002
y.m l=0.735 s=0.002
y.m l=0.745 s=0.002
y.m l=1.845 s=0.25
y.m l=2.945 s=0.005
y.m l=2.96 s=0.001
y.m l=3.06 s=0.01
y.m l=3.16 s=0.02
y.m l=3.36 s=0.02
region num=1 material=oxide y.min=-0.5 y.max=0
#top cell: a-Si:H
region num=2 silicon y.min=0.5 y.max=0.51 name=a-si
region num=3 silicon y.min=0.51 y.max=0.71 name=a-si
region num=4 silicon y.min=0.71 y.max=0.725 name=a-si
#bottom cell: uc-Si
region num=5 silicon y.min=0.725 y.max=0.745 name=uc-si
region num=6 silicon y.min=0.745 y.max=2.945 name=uc-si
region num=7 silicon y.min=2.945 y.max=2.96 name=uc-si
region num=8 material=ZnO conductor y.min=2.96 y.max=3.06
region num=9 material=Silver conductor y.min=3.06 y.max=3.16
elec num=1 name=cathode y.min=3.16 y.max=3.36 mat=Aluminum
elec num=2 name=anode y.min=0 y.max=0.5 mat=ZnO
elec num=3 name=com y.min=0.725 y.max=0.735 mat=ITO
doping region=2 uniform p.type conc=1e20
doping region=4 uniform n.type conc=1e20
doping region=5 uniform p.type conc=1e20
doping region=7 uniform n.type conc=1e20
# IV Simulation
interface optical diffusive dispersion=45 specular=1 scattered=44 \
y.min=0.495 y.max=0.505 absorption=0 region=2
interface s.s y.min=0.5 y.max=0.52 s.n=1e5 s.p=1e5
contact name=com resist=1e16
material region=8 resistivity=5e-4
material region=9 resistivity=1e-5
material material=Aluminum sopra=Al.nk
material material=Silver sopra=Ag.nk
#a-Si:H material, mobility and index of refraction definition
material region=2 taun0=1e-6 taup0=1e-6 eg300=1.7 nv300=3e20 nc300=3e20
material region=3 taun0=1e-6 taup0=1e-6 eg300=1.7 nv300=3e20 nc300=3e20
material region=4 taun0=1e-6 taup0=1e-6 eg300=1.7 nv300=3e20 nc300=3e20
mobility region=2 mun0=1 mup0=0.1
mobility region=3 mun0=2 mup0=0.2
mobility region=4 mun0=1 mup0=0.1
material region=2 \
TLU.A=200 TLU.E0=4.3 TLU.C=2.23 TLU.EG=1.7 TLU.EPS=0.22 TLU.EC=1.8 \
LAM1=0.35 LAM2=1.0 NLAM=100 out.index=solarex12_p-Si-TLU.log
material region=3 \
TLU.A=186 TLU.E0=4.02 TLU.C=2.99 TLU.EG=1.7 TLU.EPS=0.22 TLU.EC=1.8 \
LAM1=0.35 LAM2=1.0 NLAM=100 out.index=solarex12_i-Si-TLU.log
material region=4 \
TLU.A=200 TLU.E0=4.3 TLU.C=2.23 TLU.EG=1.7 TLU.EPS=0.22 TLU.EC=1.8 \
LAM1=0.35 LAM2=1.0 NLAM=100 out.index=solarex12_n-Si-TLU.log
#uc-Si:H material and mobility
material region=5 taun0=1e-6 taup0=1e-6 eg300=1.16 nc300=3.5e20 nv300=3.5e20
material region=6 taun0=1e-6 taup0=1e-6 eg300=1.16 nc300=3.5e20 nv300=3.5e20
material region=7 taun0=1e-6 taup0=1e-6 eg300=1.16 nc300=3.5e20 nv300=3.5e20
mobility region=5 mun0=5 mup0=0.5
mobility region=6 mun0=15 mup0=2
mobility region=7 mun0=5 mup0=0.5
# a-Si:H defect definition
defect region=3 cont nta=2e20 ntd=2e20 wta=0.028 wtd=0.055 \
nga=0 ngd=0 ega=1.22 egd=1.22 wga=0.188 wgd=0.188 \
numa=50 numd=50 sigtae=1.e-16 sigtah=1.e-16 sigtde=1.e-16 sigtdh=1.e-16
defects region=3 amphoteric cont signp=1e-14 sign0=5e-15 sigp0=5e-15 sigpn=1e-14 \
hconc=2e21 nsisi=2e23 sigma=0.19 t0=500 ev0=0.045 eu=0.2 \
ep.amp=1.22 num.amp=50 nv0.amp=1e20
# uc-Si:H defect definition
defect region=6 cont nta=5e19 ntd=5e19 wta=0.01 wtd=0.02 \
nga=0 ngd=0 ega=0.8 egd=0.8 wga=0.2 wgd=0.188 \
numa=50 numd=50 sigtae=5e-16 sigtah=1e-15 sigtde=1e-15 sigtdh=1e-15
models consrh print temp=300
model TLU.INDEX region=2
model TLU.INDEX region=3
model TLU.INDEX region=4
beam num=1 x.orig=5 y.orig=-10 angle=90 power.file=solarex12.spec verbose back.reflect reflect=2
method maxtrap=10
output opt.int band.temp
solve init
save outf=solarex12_0.str
#tonyplot solarex12_0.str -set solarex12_0.set
solve b1=1
log outf=solarex12_0.log
solve vanode=0.0 name=anode vstep=0.02 vfinal=1.45
#tonyplot solarex12_0.log -set solarex12_1.set
extract init infile="solarex12_0.log"
extract name="Jsc" y.val from curve(v."anode", i."anode") where x.val=0.0
extract name="JscmAcm2" $Jsc*1e08*1e03/10
extract name="Voc" x.val from curve(v."anode", i."anode") where y.val=0.0
extract name="P" curve(v."anode", (v."anode" * i."anode")) outf="solarex12_P.dat"
extract name="Pm" min(curve(v."anode", (v."anode" * i."anode")))
extract name="Vm" x.val from curve(v."anode", (v."anode"*i."anode") ) \
where y.val=$"Pm"
extract name="Im" $"Pm"/$"Vm"
extract name="FF" $"Pm"/($"Jsc"*$"Voc")*100
extract name="Eff" (1e8*$Pm/(0.1*10))*100
2- Top single cell
# (c) Silvaco Inc., 2018
go atlas
# Structure Generation
mesh
x.m l=0 s=2.5
x.m l=10 s=2.5
y.m l=-0.5 s=10
y.m l=0 s=0.1
y.m l=0.5 s=0.002
y.m l=0.51 s=0.002
y.m l=0.61 s=0.02
y.m l=0.71 s=0.002
y.m l=0.725 s=0.002
y.m l=0.73 s=0.01
region num=1 material=oxide y.min=-0.5 y.max=0
#top cell: a-Si:H
region num=2 silicon y.min=0.5 y.max=0.51 name=a-si
region num=3 silicon y.min=0.51 y.max=0.71 name=a-si
region num=4 silicon y.min=0.71 y.max=0.725 name=a-si
#region num=5 material=ZnO conductor y.min=0.725 y.max=0.825
#region num=6 material=Silver conductor y.min=0.825 y.max=0.925
#elec num=1 name=cathode y.min=3.16 y.max=3.36 mat=Aluminum
elec num=1 name=anode y.min=0.0 y.max=0.5 mat=ZnO
elec num=2 name=cathode y.min=0.725 y.max=0.73 mat=ITO
doping region=2 uniform p.type conc=1e20
doping region=4 uniform n.type conc=1e20
# IV Simulation
interface optical diffusive dispersion=45 specular=1 scattered=44 \
y.min=0.495 y.max=0.505 absorption=0 region=2
interface s.s y.min=0.5 y.max=0.52 s.n=1e5 s.p=1e5
#contact name=com resist=1e16
#material region=5 resistivity=5e-4
#material region=6 resistivity=1e-5
material material=Aluminum sopra=Al.nk
material material=Silver sopra=Ag.nk
#a-Si:H material, mobility and index of refraction definition
material region=2 taun0=1e-6 taup0=1e-6 eg300=1.7 nv300=3e20 nc300=3e20
material region=3 taun0=1e-6 taup0=1e-6 eg300=1.7 nv300=3e20 nc300=3e20
material region=4 taun0=1e-6 taup0=1e-6 eg300=1.7 nv300=3e20 nc300=3e20
mobility region=2 mun0=1 mup0=0.1
mobility region=3 mun0=2 mup0=0.2
mobility region=4 mun0=1 mup0=0.1
material region=2 \
TLU.A=200 TLU.E0=4.3 TLU.C=2.23 TLU.EG=1.7 TLU.EPS=0.22 TLU.EC=1.8 \
LAM1=0.35 LAM2=1.0 NLAM=100 out.index=solarex12_p-Si-TLU.log
material region=3 \
TLU.A=186 TLU.E0=4.02 TLU.C=2.99 TLU.EG=1.7 TLU.EPS=0.22 TLU.EC=1.8 \
LAM1=0.35 LAM2=1.0 NLAM=100 out.index=solarex12_i-Si-TLU.log
material region=4 \
TLU.A=200 TLU.E0=4.3 TLU.C=2.23 TLU.EG=1.7 TLU.EPS=0.22 TLU.EC=1.8 \
LAM1=0.35 LAM2=1.0 NLAM=100 out.index=solarex12_n-Si-TLU.log
#uc-Si:H material and mobility
# a-Si:H defect definition
defect region=2 cont nta=2e20 ntd=2e20 wta=0.028 wtd=0.055 \
nga=0 ngd=0 ega=1.22 egd=1.22 wga=0.188 wgd=0.188 \
numa=50 numd=50 sigtae=1.e-16 sigtah=1.e-16 sigtde=1.e-16 sigtdh=1.e-16
defects region=4 amphoteric cont signp=1e-14 sign0=5e-15 sigp0=5e-15 sigpn=1e-14 \
hconc=2e21 nsisi=2e23 sigma=0.19 t0=500 ev0=0.045 eu=0.2 \
ep.amp=1.22 num.amp=50 nv0.amp=1e20
# uc-Si:H defect definition
models consrh print temp=300
model TLU.INDEX region=2
model TLU.INDEX region=3
model TLU.INDEX region=4
beam num=1 x.orig=5 y.orig=-10 angle=90 power.file=solarex12.spec verbose back.reflect reflect=2
method maxtrap=10
output opt.int band.temp
solve init
save outf=solarex12_0.str
#tonyplot solarex12_0.str -set solarex12_0.set
solve b1=1
log outf=solarex12_0.log
solve vanode=0.0 name=anode vstep=0.02 vfinal=1.45
#tonyplot solarex12_0.log -set solarex12_1.set
extract init infile="solarex12_0.log"
extract name="Jsc" y.val from curve(v."anode", i."anode") where x.val=0.0
extract name="JscmAcm2" $Jsc*1e08*1e03/10
extract name="Voc" x.val from curve(v."anode", i."anode") where y.val=0.0
extract name="P" curve(v."anode", (v."anode" * i."anode")) outf="solarex12_P.dat"
extract name="Pm" min(curve(v."anode", (v."anode" * i."anode")))
extract name="Vm" x.val from curve(v."anode", (v."anode"*i."anode") ) \
where y.val=$"Pm"
extract name="Im" $"Pm"/$"Vm"
extract name="FF" $"Pm"/($"Jsc"*$"Voc")*100
extract name="Eff" (1e8*$Pm/(0.1*10))*100
3- Bottom single cell code
# (c) Silvaco Inc., 2018
go atlas
# Structure Generation
mesh
x.m l=0 s=2.5
x.m l=10 s=2.5
y.m l=0.005 s=0.002
y.m l=0.01 s=0.002
y.m l=0.02 s=0.002
y.m l=1.12 s=0.002
y.m l=2.22 s=0.25
y.m l=2.235 s=0.005
y.m l=2.335 s=0.001
y.m l=2.435 s=0.01
y.m l=2.635 s=0.02
#y.m l=3.035 s=0.02
#top cell: a-Si:H
#bottom cell: uc-Si
region num=2 silicon y.min=0 y.max=0.02 name=uc-si
region num=3 silicon y.min=0.02 y.max=2.22 name=uc-si
region num=4 silicon y.min=2.22 y.max=2.235 name=uc-si
region num=5 material=ZnO conductor y.min=2.235 y.max=2.335
region num=6 material=Silver conductor y.min=2.335 y.max=2.435
#elec num=1 name=cathode y.min=3.16 y.max=3.36 mat=Aluminum
elec num=2 name=anode y.min=0 y.max=0.005 mat=ZnO
elec num=3 name=cathode y.min=2.435 y.max=2.635 mat=Aluminum
doping region=2 uniform p.type conc=1e20
doping region=4 uniform n.type conc=1e20
# IV Simulation
#interface optical diffusive dispersion=45 specular=1 scattered=44 \
y.min=0.495 y.max=0.505 absorption=0 region=2
#interface s.s y.min=0.5 y.max=0.52 s.n=1e5 s.p=1e5
#contact name=com resist=1e16
material region=5 resistivity=5e-4
material region=6 resistivity=1e-5
material material=Aluminum sopra=Al.nk
material material=Silver sopra=Ag.nk
#a-Si:H material, mobility and index of refraction definition
#uc-Si:H material and mobility
material region=2 taun0=1e-6 taup0=1e-6 eg300=1.16 nc300=3.5e20 nv300=3.5e20
material region=3 taun0=1e-6 taup0=1e-6 eg300=1.16 nc300=3.5e20 nv300=3.5e20
material region=4 taun0=1e-6 taup0=1e-6 eg300=1.16 nc300=3.5e20 nv300=3.5e20
mobility region=2 mun0=5 mup0=0.5
mobility region=3 mun0=15 mup0=2
mobility region=4 mun0=5 mup0=0.5
# a-Si:H defect definition
# uc-Si:H defect definition
defect region=3 cont nta=5e19 ntd=5e19 wta=0.01 wtd=0.02 \
nga=0 ngd=0 ega=0.8 egd=0.8 wga=0.2 wgd=0.188 \
numa=50 numd=50 sigtae=5e-16 sigtah=1e-15 sigtde=1e-15 sigtdh=1e-15
models consrh print temp=300
beam num=1 x.orig=5 y.orig=-10 angle=90 power.file=solarex12.spec verbose back.reflect reflect=2
method maxtrap=10
output opt.int band.temp
solve init
save outf=solarex12_0.str
#tonyplot solarex12_0.str -set solarex12_0.set
solve b1=1
log outf=solarex12_0.log
solve vanode=0.0 name=anode vstep=0.02 vfinal=1.45
#tonyplot solarex12_0.log -set solarex12_1.set
extract init infile="solarex12_0.log"
extract name="Jsc" y.val from curve(v."anode", i."anode") where x.val=0.0
extract name="JscmAcm2" $Jsc*1e08*1e03/10
extract name="Voc" x.val from curve(v."anode", i."anode") where y.val=0.0
extract name="P" curve(v."anode", (v."anode" * i."anode")) outf="solarex12_P.dat"
extract name="Pm" min(curve(v."anode", (v."anode" * i."anode")))
extract name="Vm" x.val from curve(v."anode", (v."anode"*i."anode") ) \
where y.val=$"Pm"
extract name="Im" $"Pm"/$"Vm"
extract name="FF" $"Pm"/($"Jsc"*$"Voc")*100
extract name="Eff" (1e8*$Pm/(0.1*10))*100
Results was :
Tandem : Voc = 1.35582 V, Jsc = -10.2192 mA/cm2, FF= 71.9486% , PCE = -9.96876 %
Top cell : Voc = 1.08991 V, Jsc = -12.0439 mA/cm2, FF= 86.8973 % , PCE = -11.4068 %
Bottom cell : Voc = 0.502109 V, Jsc = -21.5937 mA/cm2, FF= 71.1597 % , PCE = -7.7154 %
It is supposed to get Voc(Tandem) ) = Voc(Top)+Voc(Bottom)
After having a good cup of coffee I found the solution .... it was as simple as ABC ... I have to short circuit the com contact with the anode or the cathode directly in the Tandem code
elec num=3 name=com y.min=0.725 y.max=0.735 mat=ITO
Will be
elec num=3 name=cathode y.min=0.725 y.max=0.735 mat=ITO
For top cell simulation
And
elec num=3 name=anode y.min=0.725 y.max=0.735 mat=ITO
For the bottom cell simulation ...
you can simulate both cell combined by the process you mentioned earlier or try to simulate keeping first top cell then bottom cell and finally both at a time....
Dear Arif
It tried firdtly the way that you mentioned but it doesn't work well.
Sir, can you please send me your modified code to separate top cell from the bottom cell in a tandem solar cell to do a single-cell simulation in Silvaco Atlas.
email: [email protected]
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