I was trying to simulate fixed charge traps on sentaurus TCAD.
Physics ( MaterialInterface= "SiO2/Silicon" ){
Traps(
(Fixedcharge Conc=3.4e+12 )
)
}
Here how to chose the charge concentration and what this value indicates? Does it mean this much amount of electronic charge? Also, what are the models to include in the Math/Physics section during the simulation for this? Any directions will be appreciated greatly.
You have to be careful in terms of you dimension. If 2D, the charge concentration is /cm². For fixed concentration as I remember, no special model is required... for other charge defintions a bench of models for various physics exist. In terms of fixed charge at an interface, band bending, etc. is adopted by carriers n as boundary...
Mohammad Azharul Islam Consult this http://www.sentaurus.dsod.pl/sd/sd_11.html
and read Sdevice manual with the references it is based on. there is an entire chapter about traps.
Good luck.
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