I am trying to investigate HCI degradation in a particular MOSFET.

my aim is to extract ON-Resistance degradation from IdVd curves after different stress times.

How the solve section will be?

this is my solve section that didn't work:

Solve {

*- Creating initial guess:

Coupled(Iterations= 100 LineSearchDamping= 1e-4){ Poisson }

Quasistationary (

Initialstep= 0.01 Increment= 1.35

MaxStep= 0.4 Minstep= 1.e-4

Goal { Name= "gate" Voltage= @Vgs1@}

){ Coupled { Poisson Electron Hole Temperature} }

Save(FilePrefix= "n@node@_Vg11")

Load(FilePrefix= "n@node@_Vg11")

Coupled { Poisson Electron Hole Temperature}

NewCurrentFile= "IdVd_Vg1_"

Quasistationary (

Initialstep= 2.5e-4 Increment= 1.35

Minstep= 1.e-6 MaxStep= 0.05

Goal { Name= "drain" Voltage= @Vds@ }

){ Coupled { Poisson Electron Hole Temperature}

}

NewCurrentPrefix="temp"

coupled{ poisson electron hole Temperature }

transient(

InitialTime=0 Finaltime = 100000

increment=2 InitialStep=0.1 MaxStep=100000)

{coupled{ poisson electron hole Temperature }}

CurrentPlot ( Time = (0 ; 1e-1; 1e3; 1e4)

}