Dear all,

I am doing a square pattern on a 6 mm x 6 mm GaAs substrate by photolithography. Here are the steps I did:

1. HCl treatment for 1 min. 30 s.

2. Dehydration bake at 120°C for 10 mins.

3. AZ5214 Photoresist spin coating at 4000 rpm, 40 s.

4. Hotplate bake at 90°C for 2 mins.

5. UV exposure with square pattern for 1.2 s (measured lamp power is about 25.2 mW).

6. Positive resist development using NMD for 1 min. in which I swirl the sample only after 30 s of dipping.

I attached a photo showing the result. There are photoresist smears that remain on the cell perimeter, connected to the edge beads. I only need the square pattern to be left on the sample.

Our spin coater is limited to 7500 rpm, so I could not do the fast bead removal. Aside from using an edge bead removing solution, which parameters and/or steps are recommended to be optimized or added while retaining the photoresist thickness and adhering well on the sample?

Thanks in advance for your answers.

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