Hi, I am working on the Atomic Layer Deposition(ALD) project.
Only surface reaction on the substrate(Silicon) was supposed to be done, but the gas-phase reaction in the chamber was also done because of the poor vacuum system from leakage of the chamber.
The inside surface of the chamber(Stainless Steel) has been covered Al2O3.
I tried to find the proper method to remove the Al2O3, but I couldn't find an answer since Al2O3 is insoluble to most solutions.
I wonder if there is any good solution to solve this problem except removing Al2O3 by scratching it.
Thanks for your help
Hi, Kissan Mistry. Thank you for answering.
I wonder NaOH is proper to etch Al2O3 at room temperature.
As far as I know, no solution can dissolve or make a reaction with Al2O3 at room temperature.
NaOH is able do dissolve partially oxidised Al. You should add H2O2 to the NaOH solution. Then the reaction is faster. Please use gloves. It is strong.
Hong
You have not said how the inside chamber stainless steel is covered with Al2O3. Is the stainless steel coated with pure Al2O3 powder Slurry and baked? Also sort of deposition and what substrate is being used. If possible you could give a short description of your project to me via ResearchGate on my email.
Let me know so a right solution can be suggested.
Dr. K
Is this system TH and PE ALD? You can use SF6 and O2 plasma cleaning if you have a PE ALD process. That is quite efficient and effective.
Thanks
Ashish
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