I am coating Al2O3(TMA precursor, 100nm) on Ag(lift off using LOR, 100nm Ag on 1um SiO2), the patterned Ag looks clean after lift off (both under SEM and dark mode OM), but the surface get stained after ALD. It shows same stain result when I put the wafer in 250C oven bake 15mins, and unpatterned Ag(no lift off, no wet chemistry) is clean after ALD. So I believe the stain is organic residue. Since I can't use strong oxidizer on Ag like O2 plasma and SC-1 cleaning, is there a good way to prepare ultraclean surface without any residue?
Thanks for any answer
Dear Xinxin Liu . See the following useful links: Article Atomic Layer Deposition and In-situ Characterization of Ultr...
https://www.sciencedirect.com/topics/chemical-engineering/atomic-layer-deposition
https://www.sciencedirect.com/topics/engineering/atomic-layer-deposition
Kindly see also the following useful RG links: Article Atomic Layer Deposition and In-situ Characterization of Ultr...
Chapter Atomic layer deposition
https://alcadyne.com/ald-coating/
Also check please the following useful RG links: Article A brief review of atomic layer deposition: From fundamentals...
https://www.forgenano.com/ald-technology/about-ald/
https://thinfilm.wordpress.ncsu.edu/research/basics-of-ald/#:~:text=(ALD)%20is%20a%20unique%20vapor,control%20of%20the%20coating%20thickness.
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