Thank You So Much Mam Shilpa Mehta

For process corner analysis please use 5 different corner model parameters provided for a perticular tecnology node (TT, SS, FF, SF, FS).

For power supply sweep:

www.youtube.com/watch?v=B9OHGXLQCKE

For temparature variation:

www.youtube.com/watch?v=VzxnNrOMcMo

Thank You So Much Mam Garima Varshney

I did it on cadence but unfortunately i did not do it on LT-spice before.

How I can get 5(TT,SS,FF,SF,FS) different corner model parameters for 180 nm technology?

can use PTM models

Thank you mam @Sreekala K .S

1. To perform process simulation use different process corner model files: SS (Slow PMOS Slow NMOS), FF (Fast PMOS Fast NMOS), SF (Slow PMOS Fast NMOS) and FS (Fast PMOS Slow NMOS) for parameter under consideration.

2. For temperature and voltage variations perform parametric analysis. Vary temperature say from -60 to 100 degree Celsius in 10 steps. Similarly analysis can be done for voltage variations.

3. You can also make manual corners (say C1) for more rigorous analysis by using combinations of different process, temperature and voltage corners (e.g. C1: SS, 100 C and 1.75 V in 180 nm node) and observe behavior of parameter under consideration for newly made corner (C1).

Hi,

To perform a process simulation, use different process corner model files: SS, SF, TT, FS and FF for the used technology.

For the two other parameters (supply voltage and temperature) perform parametric analysis.

See an example of voltage and temperature variations for CMOS 180nm technology :

Article Efficient butterfly inspired optimization algorithm for anal...

You can also perfrorm only the two worst cases analysis:

Article Influence of the operating regimes of MOS transistors on the...

Good luck

A few things to ponder about in case you are planning for accuracy of the results.

1. Do you want to have lowest abstraction at gate level or transistor level. Skew corner (SF,ST) process models will have to be aliased accordingly.

2. Are you going to use extracted parasitics ( layout extracted parasitics will themselve change RC annotations based on process and temperature.) So for extracted parasitics you may have to decouple temperature and process sweeps as seperate runs.