This is taking too much time to simulate and I need to find a workaround.
Chang-Ki Baek
You can reduce or widen the mesh gap where you want to know, for example, Source/Drain side and Bottom side. if you don't need gate material characteristics, then use the dirichlet boundary condition in the oxide directly
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Nitish Kumar
Hello Chang-Ki. Do you know how to include source, drain and gate in the 2-D simulations. Currently, I am not able to consider the material of the S,D and G in simulation. I have applied S,D and G as boundary conditions.
I want see how the temeprature field varies in S, D and G of power devices e.g. GaN, Ga2O3 MOSFETs.
Thank you,
Nitish
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