You can reduce or widen the mesh gap where you want to know, for example, Source/Drain side and Bottom side. if you don't need gate material characteristics, then use the dirichlet boundary condition in the oxide directly

Hello Chang-Ki. Do you know how to include source, drain and gate in the 2-D simulations. Currently, I am not able to consider the material of the S,D and G in simulation. I have applied S,D and G as boundary conditions.

I want see how the temeprature field varies in S, D and G of power devices e.g. GaN, Ga2O3 MOSFETs.

Thank you,

Nitish