Dear Researchers,
I want to optimize the MOCVD growth of GaN, InGaN and AlGaN for epitaxial growth (laser structure) on GaN substrate. I am seeking for detailed mathematical modeling or simulation program to do this optimization for Thomas Swan CCS 3X2" reactor. I need help regarding this.
Thank you.
Typically for crack-free and high quality AlGaN EBL and cladding of laser structure. BTW, I want to optimize entire process for all III-Nitrides growth.
Than, you start reading all published papers already and you will find several ideas explored.
Thank you Dr. Daniela Gogova,
I am studying the papers to address the issues. However, if you could suggest any handbook kind of thing which contains all possible MOCVD growth techniques, that would be very much helpful.
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