we have prepared the CZTS thin films using single target in RF sputtering. which formula should i use to obtain the sputtering yield of different atoms such as Cu, Sn, Zn . is it possible to get these values using process control parameters like temperature, Ar flow rate, deposition power
Dear Kalyan,
the determination of sputteryields is a complex task. I attach a paper concerning sputteryield determination for GaAs using argon ions. This paper discusses Sigmunds theory and perhaps you can apply it for your compound.
With Regard
R. Mitdank
Midank has rightly suggested that it is a complex task to understand and determine the sputtering yields.
One simple rule: Must have a good idea of the differences in the melting point of the metals, binding energy differences, and the incident bombarding ion energy. To perform an experiment and determine the sputtering yield is definitely a very complex task, and needs special arrangements in the sputtering equipment.
In my case when I was trying to make PZT thin films from multielement metal targets consisting (Pb,Zr,Ti) sputtered in oxygen, to make a complex oxide films. I had consulted many original papers to design the target with right area of the metallic surfaces. Some of those references are given below. You can get a very good qualitative idea by reading these classic papers, which I am sure will have a lot of information on some of the common metals of your interest (Cu, Zn, Tn) etc.
I am also attaching a copy of my paper on PZT thin films, where we had designed a multielement metal target, and had a reasonable success in the target design which was possible only after a careful reading of all the classic papers listed below.
The references given below have been referred in the above paper of mine.
You will find a lot of useful information when you read them.
23) R. Kelly and N.Q. Lam, Radial. Eff. 19, 39 (1973).
24) J. W. Coburn, E. Taglauer, and E. Kay, Jpn. J. App!. Phys. 2, Supp!. 1,
501 (1974).
25) A. R. Nyaiesh, Vacuum 36, 307 (1986).
26) S. Maniv and W. D. Westwood, J. Vac. Sci. Techno!. 17, 743 (1980).
27) W. D. Westwood, J. Vac. Sci. Techno!. 15,1 (1978).
28) J. A. Valles-Abarca and A. Gras-Marti, J. App!. Phys. 55,1370 (1984).
29) A. Gras-Marti and J. A. Valles-Abarca, J. Apr/. Phys. 54,1071 (1983).
30) 'Yo Yamamura, N. Matstinami, and N. !toh, Radiat. Eff. 71, 6S (1983).
31) P. Sigmund, Phys. Rev, 184, 383 (1969).
32) Vas. M. Mukhortov, V. P. Krasnolutskii, Yu. I. Golovko
Yes, the problem is complicated. I treated the ternary case (up to a point where I had to quit) in the attached 1974 paper, which also underlies part of Seah's paper.
The first question to ask is, however, what do you mean by sputter yield? There is no unique definition for a compound target. Are you interested in the weight loss per ion, the erosion rate per ion, the sputter yield of a given species? What fluence are you talking about? In the SIMS language: Are you in the static or dynamic regime?
Much of the pertinent physics for binary targets has been discussed in the attached 1993 paper.
The best bet that I can think of is contacting Vladimir Shulga to perform an OKSANA run. There are also valid MD codes, but there you will run into similar problems as with analytic theory.
I would recommend to determine the sputtering yields of different elements experimentally and correct the target composition (buy a target with the required composition) if necessary. All the process parameters should be rather used to optimize other properties - stress, uniformity, roughness, density, etc.
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