Hello, I run in to some troubles with the mechanical exfoliation of WSe2 and MoS2 on SiO2. I could get quite good flakes (~50um size) to direct exfoliate on PDMS, however 300nm SiO2/Si substrate does not work for me. The substrate is cleaned by ultrasonic in Acetone/ IPA/ DI water.
I read about some researchers also treat the substrate with Oxygen Plasma to remove organic adsorbents after the cleaning procedure I mentioned above. Is this a crucial step? If so, can I remove organic adsorbents by piranha?
many thanks in advance