I am not an expert on this, but you would need good metal contacts with your sample, then you should be able to measure the I-V curve with applying a dc current and measuring the dc voltage. Here is an article:
Since you have one resistivity value in your wafer which may be function of probe contact distance spatially, I am of the understanding if the I-V curve is ohmic (very low resistivity you reported) and a straight line, you simply cannot push any level of current and measure any level of voltage or vice versa that conforms to the straight line whose slope will lead to your measured resistivity value. Alternatively, you can use a 4 -point probe station, pass a level of current commensurate with prescribe values for typical probe current injection for a particular wafer thickness, and then measure the voltage between the inner two probes. In this way you will able to get some values of I-V set for a spatially confined zone of the wafer fixed by the outer probes distance of the 4-point probes. This may work but putting ohmic contacts at the two ends of a wafer and pushing current and then measuring voltage, I did not see any instrumentation technique for this idea.
I am attaching a related pdf copy and look into page 3 of this pdf. You can only measure or extract I-V response for a very spatially confined zone on the wafer but you can move the 4-point probes horizontally at different locations on the wafer and see whether I-V values uniformity remain same at different spatial positions of the 4-point probes. I would request you to recommend my answer if this is helpful for your question.
The following website will show you how to pass current between two outer probes and measure voltage between two inner probes of a 4-point probe tool used to measure resistivity of a bulk sample. Gathering a set of I-V values, you should plot them and if it is a linear plot, the slope of this plot can be related to your resistivity value.
The URL is : http://four-point-probes.com/four-point-probe-manual/
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