Is there any process to make Ge wafer hydrophilic?like we can make silicon hydrophilic by HCl,H2O2 solution,is there any that kind of process for Ge?
Do you want to remove the oxide layer or to you want to clean the surface?
in other words
Do you want to produce to have OH groups or bare metal?
Boiling HCl,H2O2 will partly remove the oxide leading to OH functionalities.
Etching of/to the metal (HF + X) will most likely lead to different etch rate ratios.
http://www.microchemicals.de/secret/etching.pdf
http://ma.ecsdl.org/content/MA2006-02/31/1520.full.pdf
Thank you Michael Schmitt actually I want to deposit Silver on it and also want the surface to be hydrophilic.
The surface will most likely be hydrophilic after the deposition of the silver (and cleaning). If the metal is pure (most likely not the case) spreading will occur (CA, zero degree not measureable). Bare metal even fresh SiO2 surfaces can be reactive to oxygen / oxygen containing H2O and even H2O itself. You might compare with our publications dealing inter alia with the dewetting of a SiO2 surface (within the "inclining" publication the surface is reactive, whereas in the second case the surface is reacted).
http://pubs.acs.org/doi/pdf/10.1021/j100594a017
Article Detailed statistical contact angle analyses; “slow moving” d...
Article Statistical contact angle analyses; “slow moving” drops on a...
Also you may avoid the HF dip of the wafer after standard cleaning procedure which is basically used to remove oxide residues from the wafer surface.
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