I want to simulate the passivation effects of interface passivation layer(Al2O3 on p-Si). How I can include this effect in the solar cell simulation using TCAD ATLAS Silvaco.
You can include the passivation effect of Al2O3 by adjusting the surface recombination velocity. Passivated surfaces can have as low surface recombination velocity vs as low as 10 cm/s.
I tried to include the surface recombination velocity in INTERFACE statement between Al2O3 and silicon (ATLAS Silvaco). But the effect of surface recombination velocity is very less on the Short-circuit current density of solar cell.